METHOD OF FORMING A GATE SHIELD IN AN ED-CMOS TRANSISTOR AND A BASE OF A BIPOLAR TRANSISTOR USING BICMOS TECHNOLOGIES

摘要

A method of fabricating a MOSFET transistor in a SiGe BICMOS technology and resulting structure having a drain-gate feedback capacitance shield formed between a gate electrode and the drain region. The shield does not overlap the gate and thereby minimizes effect on the input capacitance of the transistor. The process does not require complex or costly processing since the shield is composed of bipolar base material commonly used in SiGe BICMOS technologies.