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Method of forming a Gate Shield in an ED-CMOS Transistor and a base of a bipolar transistor using BICMOS Technologies
Method of forming a Gate Shield in an ED-CMOS Transistor and a base of a bipolar transistor using BICMOS Technologies
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机译:使用BICMOS技术在ED-CMOS晶体管和双极型晶体管的基极中形成栅极屏蔽的方法
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摘要
A method of fabricating a MOSFET transistor in a SiGe BICMOS technology and resulting structure having a drain-gate feedback capacitance shield formed between a gate electrode and the drain region. The shield does not overlap the gate and thereby minimizes effect on the input capacitance of the transistor. The process does not require complex or costly processing since the shield is composed of bipolar base material commonly used in SiGe BICMOS technologies.
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