RESISTIVE MEMORY DEVICE WITH ZERO-TRANSISTOR, ONE-RESISTOR BIT CELLS INTEGRATED WITH ONE-TRANSISTOR, ONE-RESISTOR BIT CELLS ON A DIE

摘要

A resistive memory array includes an array of one-transistor, one-resistor (1T1R) bit cells on a die. The resistive memory array also includes an array of zero-transistor, one-resistor (0T1R) bit cells arranged with the array of 1T1R bit cells on the same die.