HETEROJUNCTION BIPOLAR TRANSISTOR WITH BLOCKING LAYER STRUCTURE

摘要

Provided is a heterojunction bipolar transistor (HBT), including a GaAs substrate; a subcollector layer stacked on the GaAs substrate, wherein a part of or all of the subcollector layer is formed by N-type group III-V semiconductors doped by at least Te and/or Se; a blocking layer structure directly or indirectly stacked on the subcollector layer, and formed by N-type group III-V semiconductors doped by at least group IV elements, a collector layer stacked on the blocking layer structure, and formed by N-type group III-V semiconductors; a base layer stacked on the collector layer, and formed by P-type group III-V semiconductors; an emitter layer stacked on the base layer and formed by N-type group III-V semiconductors; an emitter cap layer stacked on the emitter layer and formed by N-type group III-V semiconductors; and an ohmic contact layer stacked on the emitter cap layer and formed by N-type group III-V semiconductors.