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BIPOLAR JUNCTION TRANSISTORS WITH REDUCED EPITAXIAL BASE FACETS EFFECT FOR LOW PARASITIC COLLECTOR-BASE CAPACITANCE
BIPOLAR JUNCTION TRANSISTORS WITH REDUCED EPITAXIAL BASE FACETS EFFECT FOR LOW PARASITIC COLLECTOR-BASE CAPACITANCE
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机译:具有降低的基极面效应的双极结型晶体管,可实现低寄生集电极基电容
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摘要
Fabrication methods, device structures, and design structures for a bipolar junction transistor. A dielectric structure is formed that is coextensive with a single crystal semiconductor material of a substrate in an active device region. A semiconductor layer is formed that includes a single crystal section coupled with the active device region. The semiconductor layer has an edge that overlaps with a top surface of the dielectric structure. An intrinsic base layer is formed on the semiconductor layer.
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