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Methods of fabricating bipolar junction transistors with reduced epitaxial base facets effect for low parasitic collector-base capacitance
Methods of fabricating bipolar junction transistors with reduced epitaxial base facets effect for low parasitic collector-base capacitance
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机译:具有低外延基面效应的低寄生集电极-基极电容的双极结型晶体管的制造方法
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摘要
Fabrication methods, device structures, and design structures for a bipolar junction transistor. A dielectric structure is formed that is coextensive with a single crystal semiconductor material of a substrate in an active device region. A semiconductor layer is formed that includes a single crystal section coupled with the active device region. The semiconductor layer has an edge that overlaps with a top surface of the dielectric structure. An intrinsic base layer is formed on the semiconductor layer.
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