首页> 外国专利> ELECTROSTATIC DISCHARGE PROTECTION STRUCTURE CAPABLE OF PREVENTING LATCH-UP ISSUE CAUSED BY UNEXPECTED NOISE

ELECTROSTATIC DISCHARGE PROTECTION STRUCTURE CAPABLE OF PREVENTING LATCH-UP ISSUE CAUSED BY UNEXPECTED NOISE

机译:具有防止意外噪声引起的滞留问题的静电放电保护结构

摘要

An electrostatic discharge protection structure comprises an isolation layer, a high voltage P-well, an N-well, a P-well, a first doped region of N-type conductivity, a second doped region of P-type conductivity, a third doped region of N-type conductivity, a fourth doped region of P-type conductivity, an anode, and a cathode. The isolation layer is disposed on a substrate. The high voltage P-well is disposed on the isolation layer. The N-well is disposed in the high voltage P-well. The P-well is disposed in the high voltage P-well, and the P-well is separated from the N-well. The first and the second doped regions are disposed in the N-well. The third and the fourth doped regions are disposed in the P-well. The anode is electrically connected to the first doped region and the second doped region, and the cathode is electrically connected to the fourth doped region.
机译:静电放电保护结构包括隔离层,高压P阱,N阱,P阱,N型导电性的第一掺杂区域,P型导电性的第二掺杂区域,第三掺杂的N型导电性区域,P型导电性的第四掺杂区域,阳极和阴极。隔离层设置在基板上。高压P阱设置在隔离层上。 N阱布置在高压P阱中。 P阱设置在高压P阱中,并且P阱与N阱分离。第一和第二掺杂区设置在N阱中。第三和第四掺杂区设置在P阱中。阳极电连接到第一掺杂区和第二掺杂区,并且阴极电连接到第四掺杂区。

著录项

  • 公开/公告号US2016118374A1

    专利类型

  • 公开/公告日2016-04-28

    原文格式PDF

  • 申请/专利权人 UNITED MICROELECTRONICS CORP.;

    申请/专利号US201614986741

  • 发明设计人 LU-AN CHEN;TIEN-HAO TANG;YA-TING LIN;

    申请日2016-01-04

  • 分类号H01L27/02;H01L29/06;H01L29/87;H01L29/74;

  • 国家 US

  • 入库时间 2022-08-21 14:35:56

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