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SULFUR AND FLUORINE CONTAINING ETCH CHEMISTRY FOR IMPROVEMENT OF DISTORTION AND BOW CONTROL FOR HAR ETCH
SULFUR AND FLUORINE CONTAINING ETCH CHEMISTRY FOR IMPROVEMENT OF DISTORTION AND BOW CONTROL FOR HAR ETCH
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机译:含硫和氟的蚀刻化学,以改善硬蚀刻的变形和弓形控制
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摘要
In accordance with this disclosure, there is provided several inventions, including a method for etching a plurality of features in a stack comprising alternating layers above a substrate, comprising: providing a steady state flow of an etching gas, wherein the etching gas comprises: a molecule A comprising sulfur and fluorine; a molecule B comprising carbon, fluorine, and hydrogen; and a molecule C comprising carbon and fluorine and not hydrogen; forming the etching gas into a plasma; and etching the features into the stack through the plurality of alternating layers.
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