III-V CMOS INTEGRATION ON SILICON SUBSTRATE VIA EMBEDDED GERMANIUM-CONTAINING LAYER

摘要

After forming a first trench and a second trench extending through a top elemental semiconductor layer present on a substrate including, from bottom to top, a handle substrate, a compound semiconductor template layer and a buried insulator layer to define a top elemental semiconductor layer portion for a p-type metal-oxide-semiconductor transistor, the second trench is vertically expanded through the buried insulator layer to provide an expanded second trench that exposes a top surface of the compound semiconductor template layer at a bottom of the expanded second trench. A stack of a compound semiconductor buffer layer and a top compound semiconductor layer is epitaxially grown on the compound semiconductor template layer within the expanded second trench for an n-type metal-oxide-semiconductor transistor.