首页>
外国专利>
BULK AND DIELECTRIC-ISOLATED FINFET-BASED INTEGRATED CIRCUIT
BULK AND DIELECTRIC-ISOLATED FINFET-BASED INTEGRATED CIRCUIT
展开▼
机译:基于散装和电隔离FINFET的集成电路
展开▼
页面导航
摘要
著录项
相似文献
摘要
A method for forming a dielectric-isolated bulk fin field-effect transistor (finFET) device includes forming a second isolation layer over a first structure including multiple partially exposed fins and horizontal areas including a first isolation layer. The second isolation layer is removed from horizontal areas of a first portion of the first structure. An oxide layer is formed under the fins of the first portion of the first structure. The second isolation layer is removed in order to expose the partially exposed fins and horizontal areas of the first structure to form a second structure, on which gate regions are formed.
展开▼