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Thin-film Bulk Acoustic Resonators on Integrated Circuits for Physical Sensing Applications

机译:物理传感应用集成电路上的薄膜体声谐振器

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摘要

Merging chemical and biomolecular sensors with silicon integrated circuits has the potential to push complex electronics into a low-cost, portable platform, greatly simplifying system- level instrumentation and extending the reach and functionality of point of use technologies. One such class of sensor, the thin-film bulk acoustic resonator (FBAR), has a micron-scale size and low gigahertz frequency range that is ideally matched with modern complementary metal-oxide-semiconductor (CMOS) technologies. An FBAR sensor can enable label-free detection of analytes in real time, and CMOS integration can overcome the measurement complexity and equipment cost normally required for detection with acoustic resonators. This thesis describes a body of work conducted to integrate an array of FBAR sensors with an active CMOS substrate. A monolithic fabrication method is developed, which allows for FBAR devices to be built directly on the top surface of the CMOS chip through post-processing. A custom substrate is designed and fabricated in 0.18 µm CMOS to support oscillation and frequency measurement for each sensor site in a 6×4 array. The fabrication of 0.8-1.5 GHz FBAR devices is validated for both off-chip and on-chip devices, and the integrated system is characterized for sensitivity and limit of detection. On-chip, parallel measurement of multiple sensors in real time is demonstrated for a quantitative vapor sensing application, and the limit of detection is below 50 ppm. This sensor platform could be used for a broad scope of label-free detection applications in chemistry, biology, and medicine, and it demonstrates potential for enabling a low-cost, point of use instrument.
机译:将化学和生物分子传感器与硅集成电路相结合,有可能将复杂的电子设备推向低成本,便携式平台,从而大大简化系统级仪器,并扩展使用点技术的覆盖范围和功能。其中一类传感器,即薄膜体声波谐振器(FBAR),具有微米级尺寸和低千兆赫兹频率范围,可与现代互补金属氧化物半导体(CMOS)技术完美匹配。 FBAR传感器可以实现无标记物的实时检测,而CMOS集成可以克服通常用声谐振器检测所需的测量复杂性和设备成本。本文描述了将FBAR传感器阵列与有源CMOS基板集成在一起的工作。开发了一种单片制造方法,该方法允许通过后处理将FBAR器件直接构建在CMOS芯片的顶面上。使用0.18 µm CMOS设计和制造定制基板,以支持6×4阵列中每个传感器位置的振荡和频率测量。 0.8-1.5 GHz FBAR器件的制造已针对片外和片上器件进行了验证,并且集成系统具有灵敏度和检测极限的特点。演示了用于定量蒸气感测应用的多个传感器的实时片上并行测量,并且检测极限低于50 ppm。该传感器平台可用于化学,生物学和医学领域的广泛的无标记检测应用,它展示了启用低成本使用点仪器的潜力。

著录项

  • 作者

    Johnston Matthew Leigh;

  • 作者单位
  • 年度 2012
  • 总页数
  • 原文格式 PDF
  • 正文语种 {"code":"en","name":"English","id":9}
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