ELECTRODE STRUCTURE FOR NITRIDE SEMICONDUCTOR DEVICE, AND NITRIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR

摘要

An electrode structure for nitride semiconductor device according to an embodiment of the invention includes a source electrode and a drain electrode provided from recesses of a nitride semiconductor multilayer structure to a surface of an insulating film so as to be in contact with the surface of the nitride semiconductor multilayer structure between the insulating film and the opening edges of the recesses. According to the structure of the ohmic electrodes, ON-state maximum electric field at ends of the source electrode and the drain electrode adjacent to the nitride semiconductor multilayer structure can be reduced so that the ON-state withstand voltage can be improved, as compared with an electrode structure in which end edge portions of ohmic electrodes are sandwiched between a nitride semiconductor multilayer structure and an insulating film.