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III-V NANOWIRE FET WITH COMPOSITIONALLY-GRADED CHANNEL AND WIDE-BANDGAP CORE
III-V NANOWIRE FET WITH COMPOSITIONALLY-GRADED CHANNEL AND WIDE-BANDGAP CORE
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机译:III-V沟道组成和宽禁带宽度的纳米级FET
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摘要
A method for fabricating a III-V nanowire. The method may include providing a semiconductor substrate, which includes an insulator, with a wide-bandgap layer on the top surface of the semiconductor substrate; etching the insulator to suspend the wide-bandgap layer; growing a compositionally-graded channel shell over the wide-bandgap layer; forming a gate structure forming spacers on the sidewalls of the gate structure; and forming a doped raised source drain region adjacent to the spacers.
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