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Selective area deposition of metal films by atomic layer deposition (ALD) and chemical vapor deposition (CVD)
Selective area deposition of metal films by atomic layer deposition (ALD) and chemical vapor deposition (CVD)
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机译:通过原子层沉积(ALD)和化学气相沉积(CVD)进行金属膜的选择性区域沉积
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摘要
Selective area deposition of metal films by atomic layer deposition (ALD) and chemical vapor deposition (CVD) is described. In an example, a method of fabricating a metallization structure for an integrated circuit involves forming an exposed surface above a substrate, the exposed surface including regions of exposed dielectric material and regions of exposed metal. The method also involves forming, using a selective metal deposition process, a metal layer on the regions of exposed metal without forming the metal layer on the regions of exposed dielectric material.
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