Ultraviolet light-emitting device with lateral tunnel junctions for hole injection

摘要

An ultraviolet light-emitting device with a lateral tunnel junction for hole injection includes a PN tunnel junction structure formed on a p-type layer at one side of an active region. The PN tunnel junction structure includes a p-type structure containing a plurality of alternately laminated p-AlGaN barrier layers and p-AlGaN well layers, and an n-type structure containing a plurality of alternately laminated n-AlGaN barrier layers and n-AlInGaN well layers, with the p-type structure facing the p-type layer. Both the p-type structure and the n-type structure have a plurality of projections extending from their surface. The n-type structure is formed on the p-type structure with the projections of the n-type structure fully filling void portions of the p-type structure.