Short-Wavelength Light-Emitting Devices With Enhanced Hole Injection Currents

摘要

In this report we present the results on innovative studies of improvement of the injection currents in group-III nitride-based UV-light- emitting devices. We elaborate two solutions to the problem of low efficiency of p-doping and low injection currents in wide-gap semiconductors. First, the hot-hole injector with appreciably enhancement of the injection current is proposed and developed to be integrated with commonly used vertical structures of the emitting devices. Second, we develop the alternative design of UV-light sources on the base of lateral p+ - i - n+ superlattice structures. This design provides for high concentrations of non-equilibrium 2D electrons and holes at modest electric current and aims to improve the hole currents. The lateral design facilitates increasing short-wavelength light emission and its efficiency, as well as extension of the emission of electric current pumped devices to deep UV-range. It is studied the high-field transport regimes and hot electron effects for pumping rare-earth doped nitride electroluminescent devices. The presented results create solid fundamentals for practical improvement of hole-injection currents in short-wavelength light-emitting devices, which will gain strategic advantages for numerous applications in UV optoelectronics.