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Seal ring structure with a v-shaped dielectric layer conformally overlapping a conductive layer

机译:具有v形介电层的保形环结构与导电层共形重叠

摘要

A method of forming a seal ring structure includes the following steps. A substrate is provided, and the substrate includes a seal ring region. A metal stack is formed in the seal ring region. A first dielectric layer covering the metal stack is formed. A part of the first dielectric layer is removed to form an opening to expose the metal stack, and at least a side of the opening is not perpendicular to a top surface of the first dielectric layer. A conductive layer is formed to fill the opening. A second dielectric layer is formed to continuously cover the first dielectric layer and the conductive layer, and the second dielectric layer has a v-shaped surface totally overlapping the conductive layer.
机译:形成密封环结构的方法包括以下步骤。提供衬底,并且该衬底包括密封环区域。在密封环区域中形成金属叠层。形成覆盖金属堆叠的第一介电层。去除第一介电层的一部分以形成开口以暴露金属叠层,并且开口的至少一侧不垂直于第一介电层的顶表面。形成导电层以填充开口。形成第二介电层以连续覆盖第一介电层和导电层,并且第二介电层具有完全重叠导电层的v形表面。

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