首页> 外国专利> AN ELECTRON MULTIPLYING STRUCTURE FOR USE IN A VACUUM TUBE USING ELECTRON MULTIPLYING AS WELL AS A VACUUM TUBE USING ELECTRON MULTIPLYING PROVIDED WITH SUCH AN ELECTRON MULTIPLYING STRUCTURE

AN ELECTRON MULTIPLYING STRUCTURE FOR USE IN A VACUUM TUBE USING ELECTRON MULTIPLYING AS WELL AS A VACUUM TUBE USING ELECTRON MULTIPLYING PROVIDED WITH SUCH AN ELECTRON MULTIPLYING STRUCTURE

机译:用于在真空管中使用电子倍增的电子倍增结构以及在真空中使用具有电子倍增结构的电子倍增的真空管

摘要

The invention relates to an electron multiplying structure for use in a vacuum tube using electron multiplying and to an vacuum tube using electron multiplying provided with such an electron multiplying structure. According to the invention an electron multiplying structure is proposed for use in a vacuum tube using electron multiplying, the electron multiplying structure comprising an input face intended to be oriented in a facing relationship with an entrance window of the vacuum tube, an output face intended to be oriented in a facing relationship with a detection surface of the vacuum tube, wherein the electron multiplying structure at least is composed of a semi-conductor material layer adjacent the detection windows.
机译:本发明涉及一种在具有电子倍增的真空管中使用的电子倍增结构,并且涉及一种具有这种电子倍增结构的利用电子倍增的真空管。根据本发明,提出了一种电子倍增结构,该电子倍增结构用于使用电子倍增的真空管中,该电子倍增结构包括旨在与真空管的入射窗成面向关系定向的输入面,旨在与真空管的入射窗成面向关系的输出面。所述电子倍增结构至少由与所述检测窗相邻的半导体材料层构成。

著录项

  • 公开/公告号IN2012DN10338A

    专利类型

  • 公开/公告日2016-04-01

    原文格式PDF

  • 申请/专利权人

    申请/专利号IN10338/DELNP/2012

  • 申请日2012-11-28

  • 分类号H01J40/06;H01J31/50;H01J1/32;

  • 国家 IN

  • 入库时间 2022-08-21 14:25:43

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号