首页> 外国专利> An ion barrier membrane for use in a vacuum tube using electron multiplying, an electron multiplying structure for use in a vacuum tube using electron multiplying as well as a vacuum tube using electron multiplying provided with such an electron multiplying structure

An ion barrier membrane for use in a vacuum tube using electron multiplying, an electron multiplying structure for use in a vacuum tube using electron multiplying as well as a vacuum tube using electron multiplying provided with such an electron multiplying structure

机译:设有电子倍增的真空管中使用的离子阻挡膜,具有电子倍增的真空管中使用的电子倍增结构以及具有这种电子倍增结构的利用电子倍增的真空管中

摘要

The invention relates to an electron multiplying structure for use in a vacuum tube using electron multiplying, the electron multiplying structure comprising an input face intended to be oriented in a facing relationship with an entrance window of the vacuum tube, an output face intended to be oriented in a facing relationship with a detection surface of the vacuum tube, as well as an ion barrier membrane for shielding off stray ions. The invention also relates to an vacuum tube using electron multiplying having a photocathode capable of releasing electrons into said vacuum chamber when exposed to light, electric field means for accelerating said released electrons from said photocathode towards an anode spaced apart from said photocathode in a facing relationship, as well as an electron multiplying structure according to the invention disposed in said vacuum chamber between said photocathode and said anode. The invention also relates to an ion barrier membrane for use in a vacuum tube and/or an electron multiplying structure according to the invention. It is an object of the invention is to provide an improved electron multiplying structure having an improved performance in term of shielding capabilities against stray ions and reduced loss of emitted electrons. For this purpose, the electron multiplying structure according to the invention is characterized in that said ion barrier membrane is composed of at least one atomic layer containing graphene.
机译:电子倍增结构技术领域本发明涉及一种在电子倍增的真空管中使用的电子倍增结构,该电子倍增结构包括旨在与真空管的入射窗成面对关系定向的输入面,旨在定向的输出面。与真空管的检测面以及用于屏蔽杂散离子的离子阻挡膜相对的面对。本发明还涉及一种利用电子倍增的真空管,该真空管具有当暴露于光时能够将电子释放到所述真空室中的光电阴极,一种电场装置,用于将所述释放的电子从所述光电阴极朝着与所述光电阴极以面对关系间隔开的阳极加速。以及设置在所述光电阴极和所述阳极之间的所述真空室中的根据本发明的电子倍增结构。本发明还涉及用于根据本发明的真空管和/或电子倍增结构的离子阻挡膜。发明内容本发明的目的是提供一种改进的电子倍增结构,该结构在针对杂散离子的屏蔽能力和减少的发射电子损失方面具有改进的性能。为此,根据本发明的电子倍增结构的特征在于,所述离子阻挡膜由至少一个包含石墨烯的原子层组成。

著录项

  • 公开/公告号EP2164092B1

    专利类型

  • 公开/公告日2017-02-22

    原文格式PDF

  • 申请/专利权人 PHOTONIS NETHERLANDS B V;

    申请/专利号EP20090011749

  • 发明设计人 VAN SPIJKER JAN;

    申请日2009-09-15

  • 分类号H01J43/24;H01J31/50;

  • 国家 EP

  • 入库时间 2022-08-21 14:06:05

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