首页> 外国专利> ION BARRIER MEMBRANE FOR USE IN A VACUUM TUBE USING ELECTRON MULTIPLYING, AN ELECTRON MULTIPLYING STRUCTURE FOR USE IN A VACUUM TUBE USING ELECTRON MULTIPLYING AS WELL AS A VACUUM TUBE USING ELECTRON MULTIPLYING PROVIDED WITH SUCH AN ELECTRON MULTIPLYING STRUCTURE

ION BARRIER MEMBRANE FOR USE IN A VACUUM TUBE USING ELECTRON MULTIPLYING, AN ELECTRON MULTIPLYING STRUCTURE FOR USE IN A VACUUM TUBE USING ELECTRON MULTIPLYING AS WELL AS A VACUUM TUBE USING ELECTRON MULTIPLYING PROVIDED WITH SUCH AN ELECTRON MULTIPLYING STRUCTURE

机译:使用电子倍增在真空管中使用的离子阻挡膜,使用电子倍增的真空管中使用的电子倍增结构以及使用电子倍增提供的电子倍增器在真空中使用的真空管

摘要

The invention relates to an electron multiplying structure for use in a vacuum tube using electron multiplying, the electron multiplying structure comprising an input face intended to be oriented in a facing relationship with an entrance window of the vacuum tube, an output face intended to be oriented in a facing relationship with a detection surface of the vacuum tube, as well as an ion barrier membrane for shielding off stray ions.;The invention also relates to an vacuum tube using electron multiplying having a photocathode capable of releasing electrons into said vacuum chamber when exposed to light, electric field means for accelerating said released electrons from said photocathode towards an anode spaced apart from said photocathode in a facing relationship, as well as an electron multiplying structure according to the invention disposed in said vacuum chamber between said photocathode and said anode.;The invention also relates to an ion barrier membrane for use in a vacuum tube and/or an electron multiplying structure according to the invention.;It is an object of the invention is to provide an improved electron multiplying structure having an improved performance in term of shielding capabilities against stray ions and reduced loss of emitted electrons. For this purpose, the electron multiplying structure according to the invention is characterized in that said ion barrier membrane is composed of at least one atomic layer containing graphene.
机译:电子倍增结构技术领域本发明涉及一种在电子倍增的真空管中使用的电子倍增结构,该电子倍增结构包括旨在与真空管的入射窗成面对关系定向的输入面,旨在定向的输出面。与真空管的检测表面以及用于屏蔽杂散离子的离子阻挡膜相对的关系。本发明还涉及一种利用电子倍增的真空管,该真空管具有能够在以下情况下将电子释放到所述真空室中的光电阴极。暴露于光下的电场装置,用于使从所述光电阴极向与所述光电阴极间隔开的面对面关系的阳极加速释放的电子,以及在所述真空室中位于所述光电阴极和所述阳极之间的根据本发明的电子倍增结构本发明还涉及用于真空管的离子阻挡膜本发明的目的是提供一种改进的电子倍增结构,该结构在针对杂散离子的屏蔽能力和减少的发射电子损失方面具有改进的性能。为此,根据本发明的电子倍增结构的特征在于,所述离子阻挡膜由至少一个包含石墨烯的原子层组成。

著录项

  • 公开/公告号US2010066245A1

    专利类型

  • 公开/公告日2010-03-18

    原文格式PDF

  • 申请/专利权人 JAN VAN SPIJKER;

    申请/专利号US20090559109

  • 发明设计人 JAN VAN SPIJKER;

    申请日2009-09-14

  • 分类号H01J43/06;B32B3/26;

  • 国家 US

  • 入库时间 2022-08-21 18:55:15

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号