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METHODS OF FABRICATING SEMICONDUCTOR DEVICES INCLUDING IMPLANTED REGIONS FOR PROVIDING LOW-RESISTANCE CONTACT TO BURIED LAYERS AND RELATED DEVICES
METHODS OF FABRICATING SEMICONDUCTOR DEVICES INCLUDING IMPLANTED REGIONS FOR PROVIDING LOW-RESISTANCE CONTACT TO BURIED LAYERS AND RELATED DEVICES
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机译:制造包括植入区的半导体器件的方法,以提供与埋层和相关器件的低电阻接触
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摘要
Methods of fabricating a semiconductor device include forming a first semiconductor layer of a first conductivity type and having a first dopant concentration, and forming a second semiconductor layer on the first semiconductor layer. The second semiconductor layer has a second dopant concentration that is less than the first dopant concentration. Ions are implanted into the second semiconductor layer to form an implanted region of the first conductivity type extending through the second semiconductor layer to contact the first semiconductor layer. A first electrode is formed on the implanted region of the second semiconductor layer, and a second electrode is formed on a non-implanted region of the second semiconductor layer. Related devices are also discussed.
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