NON-DESTRUCTIVE WAFER RECYCLING FOR EPITAXIAL LIFT-OFF THIN-FILM DEVICE USING A SUPERLATTICE EPITAXIAL LAYER

摘要

The present disclosure relates to methods and growth structures for making thin-film electronic and optoelectronic devices, such as flexible photovoltaic devices, using epitaxial lift-off (ELO). In particular, disclosed herein are wafer protection schemes that preserve the integrity of the wafer surface during ELO and increase the number of times that the wafer may be used for regrowth. The wafer protection schemes use growth structures that include at least one superlattice layer.