DISSOLUTION INHIBITOR FOR CHEMICALLY AMPLIFIED THICK FILM PHOTORESIST, PHOTORESIST COMPOSITION CONTAINING SAME, AND METHOD FOR PATTERNING ELEMENT BY USING SAME

摘要

The present invention relates to a dissolution inhibitor for a chemically amplified thick film photoresist composition, a photoresist composition containing the same, and a method for patterning a semiconductor element by using the same. The dissolution inhibitor, according to the present invention, makes a large difference in solubility between an exposure part and a non-exposure part of a photoresist composition, particularly, in a photolithography process using an ultraviolet ray of an i-line as an exposure light source, and does not influence the transmittance of an irradiated light source such that a certain amount of light is reached in a vertical direction of a photoresist, and can improve line edge roughness or linearity of a pattern.