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SIC SEMICONDUCTOR ELEMENT IMPLEMENTED ON INSULATING OR SEMI-INSULATING SIC SUBSTRATE AND METHOD FOR MANUFACTURING SAME
SIC SEMICONDUCTOR ELEMENT IMPLEMENTED ON INSULATING OR SEMI-INSULATING SIC SUBSTRATE AND METHOD FOR MANUFACTURING SAME
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机译:绝缘或半绝缘SIC基板上实现的SIC半导体元件及其制造方法
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摘要
The present invention relates to a SiC semiconductor element having highly pressure-resistant characteristics and a method for manufacturing the same. The SiC semiconductor element according to the present invention comprises: an insulating or semi-insulating SiC substrate; a plurality of semiconductor areas formed inside the SiC substrate; and electrodes formed on the SiC substrate so as to electrically connect the plurality of semiconductor areas. The SiC element according to the present invention has high-density semiconductor areas formed in an insulating or semi-insulating SiC substrate, thereby exhibiting highly pressure-resistant characteristics, and can be implemented through an ion implantation process.
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