首页> 外国专利> COMPOUND, RESIN, AND METHOD FOR PURIFYING SAME, UNDERLAYER FILM FORMATION MATERIAL FOR LITHOGRAPHY, UNDERLAYER FILM FORMING COMPOSITION, AND UNDERLAYER FILM, AND METHOD FOR FORMING RESIST PATTERN AND METHOD FOR FORMING CIRCUIT PATTERN

COMPOUND, RESIN, AND METHOD FOR PURIFYING SAME, UNDERLAYER FILM FORMATION MATERIAL FOR LITHOGRAPHY, UNDERLAYER FILM FORMING COMPOSITION, AND UNDERLAYER FILM, AND METHOD FOR FORMING RESIST PATTERN AND METHOD FOR FORMING CIRCUIT PATTERN

机译:用于光刻的化合物,树脂和方法,光刻的基底膜形成材料,基底膜形成组合物和基底膜,形成抗蚀剂图案的方法,形成电路图案的方法

摘要

The present invention provides a compound represented by formula (1). (In formula (1), R1 represents a C1-30 2n-valent group, and R2-R5 each independently represent a C1-10 straight chain, branched, or cyclic alkyl group, a C6-10 aryl group, a C2-10 alkenyl group, a C1-30 alkoxy group, a halogen atom, a thiol group, or a hydroxyl group. However, at least one selected from R1-R5 represents a group including an iodine atom, and at least one R4 and/or at least one R5 represents one or more species selected from the group consisting of a hydroxyl group and a thiol group. In the formula, m2 and m3 each independently represents an integer of 0-8, and m4 and m5 each independently represents an integer of 0-9. However, m4 and m5 do not both represent 0 at the same time. In the formula, n represents an integer of 1-4, and p2-p5 each independently represents an integer of 0-2.)
机译:本发明提供了由式(1)表示的化合物。 (在式(1)中,R 1 表示C1-30 2n价基团,R 2 -R 5 分别独立地表示a C1-10直链,支链或环状烷基,C6-10芳基,C2-10烯基,C1-30烷氧基,卤素原子,硫醇基或羟基。从R 1 -R 5 中选择的至少一个代表包括碘原子的基团,以及至少一个R 4 和/或至少一个R 5 表示选自羟基和硫醇基的一种或多种,​​式中,m 2 和m 3 分别独立表示整数0-8,m 4 和m 5 分别独立表示0-9,但是m 4 和m 5 不能同时表示0,在公式中,n表示1-4的整数,而p 2 -p 5 分别代表0-2的整数。)

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