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COMPOUND, RESIN, AND METHOD FOR PURIFYING SAME, UNDERLAYER FILM FORMATION MATERIAL FOR LITHOGRAPHY, UNDERLAYER FILM FORMING COMPOSITION, AND UNDERLAYER FILM, AND METHOD FOR FORMING RESIST PATTERN AND METHOD FOR FORMING CIRCUIT PATTERN
COMPOUND, RESIN, AND METHOD FOR PURIFYING SAME, UNDERLAYER FILM FORMATION MATERIAL FOR LITHOGRAPHY, UNDERLAYER FILM FORMING COMPOSITION, AND UNDERLAYER FILM, AND METHOD FOR FORMING RESIST PATTERN AND METHOD FOR FORMING CIRCUIT PATTERN
The present invention provides a compound represented by formula (1). (In formula (1), R1 represents a C1-30 2n-valent group, and R2-R5 each independently represent a C1-10 straight chain, branched, or cyclic alkyl group, a C6-10 aryl group, a C2-10 alkenyl group, a C1-30 alkoxy group, a halogen atom, a thiol group, or a hydroxyl group. However, at least one selected from R1-R5 represents a group including an iodine atom, and at least one R4 and/or at least one R5 represents one or more species selected from the group consisting of a hydroxyl group and a thiol group. In the formula, m2 and m3 each independently represents an integer of 0-8, and m4 and m5 each independently represents an integer of 0-9. However, m4 and m5 do not both represent 0 at the same time. In the formula, n represents an integer of 1-4, and p2-p5 each independently represents an integer of 0-2.)
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