ADHESION LAYER TO MINIMIZE DILELECTRIC CONSTANT INCREASE WITH GOOD ADHESION STRENGTH IN A PECVD PROCESS

摘要

Embodiments of the present invention provide a method and a film stack for depositing an adhesive layer for a low dielectric constant bulk layer, without the need for an initiation layer. The film stack for use in a semiconductor device comprises a double layer low-K dielectric deposited directly over the underlying layer. The double low-K dielectric consists of an adhesive layer deposited without a carbon-free initiation layer.