solid-state image sensing device is a photoelectric conversion unit including a matrix of unit pixels arranged type and a pixel is a pixel array unit vertical signal lines per column; And the made of the installed unit read circuit for each of the plurality of columns of pixels, according to the photoelectric conversion operation and the reset signal by the pixel reset output to the vertical signal line from the unit pixel by a plurality of pixel columns of the pixel array unit in units and a column processing unit for processing a light accumulation signal (received-light photoelectric conversion signal). The unit read circuits, each one of the plurality of vertical signal lines corresponding to each of a plurality of pixel columns, and the input terminal is connected to, in turn, a plurality of input switches for performing on / off operations; Once the at least one input capacitor is connected in common to each output terminal of the plurality of input switches; A reference switch that selectively give the reference voltage on the input side capacitor; An operational amplifier input stage is connected to the other end of the input side capacitor; Optionally, a reset switch for short-circuiting between input and output terminals of the operational amplifier; And the corresponds to install a plurality of pixel columns, and a plurality of the feedback circuit including a feedback switch and a feedback capacitance connected between the input and output terminals of the operational amplifier in series. ;
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