首页> 外国专利> TRANSISTOR FOR CONTROLLING ON/OFF STATES OF ELECTRICITY BY HAVING ONE OR MORE BENDING DEFORMATIONS OF GRAPHENE, GRAPHENE SINGLE ELECTRON TRANSISTOR, AND ELECTRON TUNNELING GRAPHENE TRANSISTOR

TRANSISTOR FOR CONTROLLING ON/OFF STATES OF ELECTRICITY BY HAVING ONE OR MORE BENDING DEFORMATIONS OF GRAPHENE, GRAPHENE SINGLE ELECTRON TRANSISTOR, AND ELECTRON TUNNELING GRAPHENE TRANSISTOR

机译:通过使石墨烯,石墨烯单电子晶体管和电子隧道石墨烯晶体管具有一个或多个弯曲变形来控制电的开/关状态的晶体管

摘要

The present invention provides a transistor for controlling on/off states of electricity by having one or more bending deformations of a graphene which comprise controlling on/off states of electricity by adjusting the height of a Fermi level of one or more graphenes between one or more graphenes and a drain electrode by including one or more graphenes with one or more deformations due to a voltage of a barrier adjusting circuit crossed with a circuit of one or more graphenes selected among one or more piezo materials, magnetic particles, and particles having a charge provided in a lower part of one or more graphenes while one or more graphenes have a plane nonidentical to that of the drain electrode.;COPYRIGHT KIPO 2016
机译:本发明提供了一种用于通过具有石墨烯的一个或多个弯曲变形来控制电的开/关状态的晶体管,该晶体管包括通过在一个或多个石墨烯之间调整一个或多个石墨烯的费米能级的高度来控制电的开/关状态。通过包括一种或多种石墨烯而形成的石墨烯和漏电极,所述石墨烯由于势垒调节电路的电压与一种或多种石墨烯的电路相交而导致一种或多种变形,所述一种或多种石墨烯选自一种或多种压电材料,磁性颗粒和带电荷的颗粒在一种或多种石墨烯的下部提供,而一种或多种石墨烯的平面与漏电极的平面不同。; COPYRIGHT KIPO 2016

著录项

  • 公开/公告号KR20160012906A

    专利类型

  • 公开/公告日2016-02-03

    原文格式PDF

  • 申请/专利权人 LEE YOUN TEK;

    申请/专利号KR20150091702

  • 发明设计人 LEE YOUN TEKKR;

    申请日2015-06-27

  • 分类号H01L41/25;H01L41/39;

  • 国家 KR

  • 入库时间 2022-08-21 14:15:09

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