首页> 外文OA文献 >A graphene bilayer channel transistor with a very high Ion/Ioff ratio, graphene single electron devices and graphene nano-mechanical structures for NEMS

【2h】

A graphene bilayer channel transistor with a very high Ion/Ioff ratio, graphene single electron devices and graphene nano-mechanical structures for NEMS

机译：具有极高离子/ Ioff比的石墨烯双层沟道晶体管，石墨烯单电子器件和用于NEms的石墨烯纳米机械结构

代理获取

本网站仅为用户提供外文OA文献查询和代理获取服务，本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文，但由于OA文献来源多样且变更频繁，仍可能出现获取不到、文献不完整或与标题不符等情况，如果获取不到我们将提供退款服务。请知悉。

页面导航

著录项
引文网络
相似文献
相关主题

著录项

作者
Moktadir Zakaria; Boden Stuart; Ghiass Mohammad Adel; Rutt Harvey; Mizuta Hiroshi; Miyazaki H; Li S-L; Tsukagoshi K;
展开▼
作者单位

展开▼
年度 2011
总页数
原文格式 PDF
正文语种 {"code":"en","name":"English","id":9}
中图分类

相似文献

外文文献
中文文献
专利

1. U-shaped bilayer graphene channel transistor with very high Ion/Ioff ratio [J] . Moktadir Z.Boden S.A.Ghiass A.Rutt H.Mizuta H. Electronics Letters . 2011,第3期

机译：具有非常高的Ion / Ioff比的U形双层石墨烯沟道晶体管
2. From Benzene to Graphene: Exploring the Electronic Structure of Single-Layer and Bilayer Graphene Using Polycyclic Aromatic Hydrocarbons [J] . Domenico Janna, Schneider Alexis M., Sohlberg Karl Journal of Chemical Education . 2019,第10期

机译：从苯到石墨烯：使用多环芳烃探索单层和双层石墨烯的电子结构
3. Challenges for single molecule electronic devices with nanographene and organic molecules. Do single molecules offer potential as elements of electronic devices in the next generation? [J] . Enoki Toshiaki, Kiguchi Manabu Physica Scripta: An International Journal for Experimental and Theoretical Physics . 2018,第5期

机译：具有纳米图谱和有机分子的单分子电子器件的挑战。单个分子是否可以作为下一代电子设备的元素提供潜力？
4. Downscaled graphene nanodevices: Helium ion beam based nanofabrication, graphene single-carrier transistors (GSCTs) and nano-electro-mechanical (GNEM) switches [C] . Mizuta Hiroshi, Iwasaki Takuya, Kalhor Nima, IEEE International Conference on Solid-State and Integrated Circuit Technology . 2014

机译：缩减规模的石墨烯纳米器件：基于氦离子束的纳米加工，石墨烯单载流子晶体管（GSCT）和纳米机电（GNEM）开关
5. Side-gated graphene field-effect-transistors for novel electronic device applications. [D] . Chen, Hong-Yan. 2013

机译：用于新型电子设备应用的侧门石墨烯场效应晶体管。
6. High Ion/Ioff current ratio graphene field effect transistor: the role of line defect [O] . Mohammad Hadi Tajarrod, Hassan Rasooli Saghai 2015

机译：高我开/我截止电流比石墨烯场效应晶体管：线缺陷的作用
7. U-shaped bilayer graphene channel transistor with very high Ion/Ioff ratio [O] . Moktadir Zakaria, Boden Stuart, Ghiass Mohammad Adel, 2011

机译：U形双层石墨烯沟道晶体管，具有非常高的Ion / Ioff比
8. New Route toward Systematic Control of Electronic Structures of Graphene and Fabrication of Graphene Field Effect Transistors. [R] . Pala, N. 2016

机译：石墨烯电子结构系统控制的新途径及石墨烯场效应晶体管的制备。

A graphene bilayer channel transistor with a very high Ion/Ioff ratio, graphene single electron devices and graphene nano-mechanical structures for NEMS

著录项

引文网络

相似文献

相关主题

期刊订阅