POLYARYLENE ETHER-BASED BLOCK COPOLYMER, COMPOSITION FOR FORMING HARD MASK CONTAINING SAME, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING HARD MASK FORMED THEREFROM AS ETCHING MASK

摘要

Provided are a polyarylene ether-based block copolymer in which a first and a second polyarylene block having different chemical structures are connected by a methylene connector, a composition for forming a hard mask containing the same, and a method for manufacturing a semiconductor device using the hard mask formed therefrom as an etching mask. The polyarylene ether-based block copolymer according to the present invention has high heat resistance and high chemical resistance, and also exhibits excellent crosslinking and etching resistance. Accordingly, the composition for forming a hard mask containing the block copolymer can form a hard mask by spin-on coating, and is process-friendly and can reduce the pollution of a hard mask layer and the contamination of equipment, since the generation of gas (outgassing) derived from the decomposition of an additive in a heating process, which is performed at about 200-400°C, does not exist or is inhibited, due to having a self-crosslinking characteristic without the need for an additive such as a crosslinking agent or the like.;COPYRIGHT KIPO 2016