Polyarylene ether-based block copolymer composition for forming hard mask containing the same and method of making semiconductor device using hard mask formed therefrom as etching mask

摘要

A polyarylene ether block copolymer in which first and second polyarylene ether blocks having different chemical structures are linked by a methylene linking group, a composition for forming a hard mask comprising the same, and a hard mask formed using the same, A method of manufacturing a semiconductor device is provided. The polyarylene ether block copolymer according to the present invention has high heat resistance and high endurance, and is excellent in crosslinking and etching resistance. Therefore, the composition for forming a hard mask film including the block copolymer can form a hard mask by spin-on coating and has a self-crosslinking property without additives such as a cross-linking agent, No outgassing resulting from the decomposition of the additive in the heating process carried out at 400C can be eliminated or suppressed, which is process friendly and can reduce hard mask film contamination and equipment contamination.