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SEMICONDUCTOR DEVICE WITH TERMINATION MESA BETWEEN TERMINATION STRUCTURE AND CELL FIELD OF FIELD ELECTRODE STRUCTURES

机译:端接结构与电池电场场结构之间具有端接介电层的半导体器件

摘要

A semiconductor device (500) includes a cell field (610) which includes multiple field electrode structures (160) and cell mesas (170). The field electrode structures (160) are aligned in lines. The cell mesas (170) separate the adjacent field electrode structures of the field electrode structures (160) from each other. Each of the field electrode structures (160) includes a field electrode (165) and a field dielectric (161) which separates the field electrode (165) from a semiconductor main body (100). A termination structure (180) encloses the cell field (610), is extended from a first surface (101) to the inside of the semiconductor main body (100) and includes a termination electrode (185) and a termination dielectric (181) which separates the termination electrode (185) from the semiconductor main body (100). The termination dielectrics (181) and the field dielectrics (161) have an identical thickness. A termination mesa (190), which is wider than the cell mesas (170), separates the termination structure (180) from the cell field (610).;COPYRIGHT KIPO 2016
机译:半导体器件(500)包括单元场(610),单元场(610)包括多个场电极结构(160)和单元台面(170)。场电极结构(160)成一直线排列。单元台面(170)将场电极结构(160)的相邻场电极结构彼此分开。每个场电极结构(160)包括场电极(165)和将场电极(165)与半导体主体(100)分开的场电介质(161)。终端结构(180)包围单元场(610),并从第一表面(101)延伸到半导体主体(100)的内部,并包括终端电极(185)和终端电介质(181),该终端电介质将终端电极(185)与半导体主体(100)分开。终端电介质(181)和场电介质(161)具有相同的厚度。终止台面(190)比单元台面(170)宽,将终止结构(180)与单元场(610)分开。; COPYRIGHT KIPO 2016

著录项

  • 公开/公告号KR20160026794A

    专利类型

  • 公开/公告日2016-03-09

    原文格式PDF

  • 申请/专利权人 INFINEON TECHNOLOGIES AUSTRIA AG;

    申请/专利号KR20150121869

  • 发明设计人 LAFORET DAVIDFR;SIEMIENIEC RALFDE;

    申请日2015-08-28

  • 分类号H01L29/66;H01L29/78;

  • 国家 KR

  • 入库时间 2022-08-21 14:14:57

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