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Semiconductor device with a termination mesa between a termination structure and a cell field of field electrode structures

机译:在终端结构和场电极结构的单元场之间具有终端台面的半导体器件

摘要

A semiconductor device includes a cell field with a plurality of field electrode structures and cell mesas. The field electrode structures are arranged in lines. The cell mesas separate neighboring ones of the field electrode structures from each other. Each field electrode structure includes a field electrode and a field dielectric separating the field electrode from a semiconductor body. A termination structure surrounds the cell field, extends from a first surface into the semiconductor body, and includes a termination electrode and a termination dielectric separating the termination electrode from the semiconductor body. The termination and field dielectrics have the same thickness. A termination mesa, which is wider than the cell mesas, separates the termination structure from the cell field.
机译:半导体器件包括具有多个场电极结构和单元台面的单元场。场电极结构成行布置。单元台面将相邻的场电极结构彼此分开。每个场电极结构包括场电极和将场电极与半导体本体分开的场电介质。终端结构围绕单元场,从第一表面延伸到半导体主体中,并且包括终端电极和将终端电极与半导体主体分开的终端电介质。终端和场电介质具有相同的厚度。终止台面比单元台面宽,将终止结构与单元场分开。

著录项

  • 公开/公告号US9972714B2

    专利类型

  • 公开/公告日2018-05-15

    原文格式PDF

  • 申请/专利权人 INFINEON TECHNOLOGIES AUSTRIA AG;

    申请/专利号US201514837488

  • 发明设计人 DAVID LAFORET;RALF SIEMIENIEC;

    申请日2015-08-27

  • 分类号H01L29/76;H01L29/94;H01L29/78;H01L29/40;H01L29/06;H01L21/02;H01L29/66;H01L29/423;H01L29/739;

  • 国家 US

  • 入库时间 2022-08-21 12:59:19

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