RESISTIVE RANDOM ACCESS MEMORY DEVICE HAVING NANOSCALE TIP, MEMORY ARRAY USING SAME AND FABRICATION METHOD THEREOF

摘要

The present invention relates to a resistive random access memory device having a nanoscale tip with high compatibility with an existing semiconductor process, a memory array using the same and a fabrication method thereof. A lower electrode having a protruding tip structure in a cone shape is formed by etching a semiconductor substrate. Therefore, the present invention provides technology for localizing a region for forming a conductive filament by focusing an electric field on the lower electrode intersecting with an upper electrode. The resistive random access memory device comprises a lower electrode; an interlayer insulating layer; a resistance change layer; and an upper electrode.;COPYRIGHT KIPO 2016