ATOMIC LAYER DEPOSITION APPARATUS FOR COATING NANO THIN FILM LAYER ON SURFACE OF MULTI-LAYER CERAMIC CHIP COMPONENT

摘要

According to the present invention, disclosed is an atomic layer deposition apparatus including: a chamber part comprising a chamber housing which a process gas flows in and a heating unit to heat the inside of the chamber housing; a rotation part comprising a rotary housing which is combined to the inside of the chamber housing while being rotatable about a center axis in a horizontal direction and the process gas flows in from one side and is discharged to the other side, and a rotation means to rotate the rotary housing; a gas supply part comprising a gas supply source to store the process gas, a gas supply line to connect the gas supply source and the chamber housing, and a control valve to control flow of the process gas while being installed on the gas supply line; and a ventilation part to discharge the process gas while being connected to the other side of the chamber housing.