Atomic Layer Deposition Apparatus for Coating Nano Thin Film Layer on Surface of Multi-Layer Ceramic Chip Component

摘要

The present invention relates to a plasma processing apparatus comprising a chamber section including a chamber housing into which a process gas is introduced and a heating means for heating the interior of the chamber housing, And a rotation unit for rotating the rotary housing; a gas supply source for storing the process gas; a gas supply line for connecting the gas supply source and the chamber housing; A gas supply unit provided on the supply line and having a control valve for controlling the flow of the process gas, and an exhaust unit connected to the other side of the chamber housing to discharge the process gas.