POROUS PYRAMID PHOTOELECTRODE BASED GAN AND METHOD

摘要

According to the present invention, a preparation method of a GaN-based porous pyramid photoelectrode, comprises the steps of: (a) performing an electrochemical etching on a GaN on a substrate to form a porous nanostructure; (b) through SiO_2 microsphere or photolithography process, performing micro-patterning on the porous nanostructure into the pyramid structure; (c) through a dry etching process, etching the porous nanostructure according to the pyramid structure patterned in (b); (d) coating the porous pyramid structure formed through the etching process in (c) with a solution containing nanoparticles (202); and (e) drying the porous pyramid structure so that the nanoparticles (202) can permeate and get fixed inside the porous pyramid structure. Accordingly, the present invention has the effects of increasing the reflection rate and hydrogen efficiency of internal chemical materials.