POROUS PYRAMID PHOTOELECTRODE BASED GaN AND METHOD

摘要

A method for fabricating a GaN-based porous pyramidal photoelectrode according to the present invention includes the steps of: (a) forming a porous nanostructure on a substrate by electrochemical etching of GaN; (b) micropatterning the porous nanostructure with the pyramidal structure through a SiO ₂ microsphere or a photolithography process; (c) etching the porous nanostructure through a dry etching process to a patterned pyramid structure in step (b). (d) applying a solution including the nanoparticles 202 to the porous pyramid structure formed through the etching process in the step (c). And (e) drying the porous pyramid structure to allow the nanoparticles 202 to enter and fix the porous pyramid structure, thereby improving the reflectance and the internal chemical hydrogen efficiency.