Porous GaN photoelectrode fabricated by photo-assisted electrochemical etching using ionic liquid as etchant

摘要

Here we report an environment-friendly approach to fabricate porous GaN photoelectrode using ionic liquid as the etchant. SEM images revealed photo-assisted electrochemical etching (PECE) has better etching effect than electrochemical etching (ECE). Furthermore, Raman spectra demonstrated porous GaN obtained by PECE has better lattice integrity than that obtained by ECE. The photocurrent of porous GaN prepared by PECE is six times and two times of planar and porous GaN fabricated by ECE, respectively. Above results indicated porous GaN obtained by PECE can be a promising photoelectrode for optoelectronic applications. (C) 2016 Elsevier B.V. All rights reserved.