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METHOD FOR FORMING MONOLAYER TUNGSTEN DICHALCOGENIDE AND MONOLAYER TUNGSTEN DICHALCOGENIDE USING THE SAME

机译:形成单层钨二钨和单层钨二钨的方法

摘要

Disclosed is a monolayer tungsten dichalcogenide forming method. The monolayer tungsten dichalcogenide forming method includes: a step of arranging a ceramic boat on which a precursor solution containing a gold leaf layer and ammonium metatungstate (AMT) arranged in a lower side of the gold leaf layer and having an area corresponding to an area of the gold leaf layer is sprayed in a chemical vapor deposition (CVD) chamber; a step of supplying a hydrogen sulfide (H_2S) gas or a sodium hydrogen selenide (H_2Se) gas and a nitrogen (N_2) gas to the chamber; and a step of forming a monolayer of tungsten disulphide (WS_2) or tungsten diselenide (WSe_2) on the underside of the gold leaf layer by heating the gold leaf layer and the ceramic boat.
机译:公开了一种单层二硫化钨钨的形成方法。单层二硫化钨钨的形成方法包括:布置陶瓷舟皿,在其上布置前驱体溶液的前驱体溶液包含金箔层和偏钨酸铵(AMT),前驱体溶液布置在金箔层的下侧中,并且具有对应于铝箔面积的面积。在化学气相沉积(CVD)室中喷涂金箔层;向腔室供应硫化氢(H_2S)气体或硒化氢钠(H_2Se)气体和氮气(N_2)的步骤;通过加热金箔层和陶瓷舟皿在金箔层的底面上形成二硫化钨(WS_2)或二硒化钨(WSe_2)的单层的步骤。

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