首页> 外国专利> METHOD FOR FORMING MONOLAYER TUNGSTEN DICHALCOGENIDE AND MONOLAYER TUNGSTEN DICHALCOGENIDE USING THE SAME

METHOD FOR FORMING MONOLAYER TUNGSTEN DICHALCOGENIDE AND MONOLAYER TUNGSTEN DICHALCOGENIDE USING THE SAME

机译:形成单层钨二钨和单层钨二钨的方法

摘要

A method for forming a single layer tungsten dicarcogenide is disclosed. A method of forming a monolayer tungsten dicarconeide includes forming a gold layer and a ceramic layer having a surface area corresponding to the area of the gold layer and disposed in the lower portion of the gold layer and containing a precursor solution containing ammonium metatungstate (AMT) Placing a ceramic boat in a chemical vapor deposition (CVD) chamber; Supplying a hydrogen sulfide (H 2 S) gas or a hydrogen selenide (H 2 Se) gas and a nitrogen (N 2 ) gas into the chamber; And heating the gold foil layer and the ceramic boat to form a single layer of tungsten disulphide (WS 2 ) or tungsten diselenide (WSe 2 ) on the lower surface of the gold foil layer do.
机译:公开了一种用于形成单层二碳化钨的方法。形成单层二碳化钨的方法包括形成金层和陶瓷层,该陶瓷层的表面积与金层的面积相对应并且设置在金层的下部并且包含含有偏钨酸铵(AMT)的前体溶液。将陶瓷舟皿放置在化学气相沉积(CVD)室中;向其中供应硫化氢(H 2 )气体或硒化氢(H 2 Se)气体和氮气(N 2 )气体房间;加热金箔层和陶瓷舟皿,在金的下表面形成一层二硫化钨(WS 2 )或二硒化钨(WSe 2 )单层铝箔层做。

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