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METHOD FOR FORMING MONOLAYER TUNGSTEN DICHALCOGENIDE AND MONOLAYER TUNGSTEN DICHALCOGENIDE USING THE SAME
METHOD FOR FORMING MONOLAYER TUNGSTEN DICHALCOGENIDE AND MONOLAYER TUNGSTEN DICHALCOGENIDE USING THE SAME
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机译:形成单层钨二钨和单层钨二钨的方法
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摘要
A method for forming a single layer tungsten dicarcogenide is disclosed. A method of forming a monolayer tungsten dicarconeide includes forming a gold layer and a ceramic layer having a surface area corresponding to the area of the gold layer and disposed in the lower portion of the gold layer and containing a precursor solution containing ammonium metatungstate (AMT) Placing a ceramic boat in a chemical vapor deposition (CVD) chamber; Supplying a hydrogen sulfide (H 2 S) gas or a hydrogen selenide (H 2 Se) gas and a nitrogen (N 2 ) gas into the chamber; And heating the gold foil layer and the ceramic boat to form a single layer of tungsten disulphide (WS 2 ) or tungsten diselenide (WSe 2 ) on the lower surface of the gold foil layer do.
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