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Monolayer films of semiconducting metal dichalcogenides, methods of making same, and uses of same
Monolayer films of semiconducting metal dichalcogenides, methods of making same, and uses of same
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机译:半导体金属二卤化物的单层膜,其制备方法及其用途
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摘要
Metal-chalcogenide films disposed on a substrate comprising at least one monolayer (e.g., 1 to 10 monolayers) of a metal-chalcogenide. The films can be continuous (e.g., structurally and/or electrically continuous) over 80% or greater of the substrate that is covered by the film. The films can be made by methods based on low metal precursor concentration relative to the concentration of chalcogenide precursor. The methods can be carried out at low water concentration. The films can be used in devices (e.g., electrical devices and electronic devices).
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