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Optical signature of symmetry variations and spin-valley coupling in atomically thin tungsten dichalcogenides

机译:原子稀钨二卤化物中对称性变化和自旋谷耦合的光学特征

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摘要

We report systematic optical studies of WS2 and WSe2 monolayers and multilayers. The efficiency of second harmonic generation shows a dramatic even-odd oscillation with the number of layers, consistent with the presence (absence) of inversion symmetry in even-layer (odd-layer). Photoluminescence (PL) measurements show the crossover from an indirect band gap semiconductor at multilayers to a direct-gap one at monolayers. A hot luminescence peak (B) is observed at ~0.4 eV above the prominent band edge peak (A) in all samples. The magnitude of A-B splitting is independent of the number of layers and coincides with the spin-valley coupling strength in monolayers. Ab initio calculations show that this thickness independent splitting pattern is a direct consequence of the giant spin-valley coupling which fully suppresses interlayer hopping at valence band edge near K points because of the sign change of the spin-valley coupling from layer to layer in the 2H stacking order.
机译:我们报告了WS2和WSe2单层和多层的系统光学研究。二次谐波的产生效率显示出奇异的奇偶振荡,其层数与偶数层(奇数层)中反演对称性的存在(不存在)一致。光致发光(PL)测量显示了从多层的间接带隙半导体到单层的直接带隙半导体的交叉。在所有样品中,在显着的谱带边缘峰(A)上方约0.4 eV处观察到一个热发光峰(B)。 A-B分裂的大小与层数无关,并且与单层中的自旋谷耦合强度一致。从头算计算表明,这种与厚度无关的分裂模式是巨大的自旋谷耦合的直接结果,该自旋谷耦合完全抑制了K点附近价带边缘处的层间跳变,因为自旋谷耦合在层中逐层变化。 2H堆叠顺序。

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