METHOD FOR SELECTIVELY DEPOSITING DICHALCOGENIDE THIN FILM USING ATOMIC LAYER DEPOSITION

摘要

The present invention relates to a method for selectively depositing a chalcogenide thin film using an atomic layer deposition method, and more particularly, the method comprising the steps of: 1) providing a substrate having a conductive layer and an insulating layer including a metal; 2) supplying a molybdenum precursor and oxygen gas to the substrate to deposit a molybdenum oxide layer on the conductive layer; and 3) adding a chalcogen source and generating a low-temperature plasma to form a chalcogenide thin film It provides a selective deposition method of a chalcogenide thin film using an atomic layer deposition (ALD), comprising the step of, the present invention is to deposit a thin desired metal or metal oxide using the atomic layer deposition (ALD), chalcogen By treating the source, a desired number of layers of a two-dimensional chalcogenide material can be synthesized. The area selective deposition technology based on the atomic layer deposition method has developed enough to be applied to the current semiconductor mass production process, and has the advantage that it can be quickly applied for mass production of two-dimensional chalcogenide materials and use as devices in the future.