ALD ALE DEPOSITION OF CONFORMAL FILMS BY ALD AND ATOMIC LAYER ETCH

摘要

Provided are methods for depositing conformal films by using halogen etchant during atomic layer deposition (ALD). The methods include a step of exposing a halogen-containing etchant such as nitrogen trifluoride between a step of exposing a substrate to a first precursor, and a step of exposing the substrate to a second plasma-activated reaction material. Examples of the conformal films which may be deposited include silicon-containing layers and metal-containing layers. Also, related devices can be provided. So, conformality of a deposited layer can be improved.