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p p CRYSTAL GROWTH CONTROL AGENT METHOD FOR FORMING p-TYPE SEMICONDUCTOR MICROPARTICLES OR p-TYPE SEMICONDUCTOR MICROPARTICLE FILM COMPOSITION FOR FORMING HOLE TRANSPORT LAYER AND SOLAR CELL
p p CRYSTAL GROWTH CONTROL AGENT METHOD FOR FORMING p-TYPE SEMICONDUCTOR MICROPARTICLES OR p-TYPE SEMICONDUCTOR MICROPARTICLE FILM COMPOSITION FOR FORMING HOLE TRANSPORT LAYER AND SOLAR CELL
First, a crystal growth controlling agent which suppresses an increase in the crystal size of the p-type semiconductor and enables the chemical modification of the surface of the p-type semiconductor fine particles, a p-type semiconductor fine particle or p-type semiconductor fine particle A method for forming a caption, a composition for forming a hole transport layer of a solar cell, and a solar cell using the composition for forming the hole transport layer. Secondly, even when an organic salt (an ionic liquid) having anions other than thiocyanic acid ions is used, crystallization and miniaturization of the p-type semiconductor are promoted and the chemical modification of the surface of the p- A composition for forming a hole transport layer, and a solar cell using the same. The crystal growth controlling agent according to the present invention is a crystal growth inhibitor which is produced by dissolving protons or cations to produce a thiolate anion and at least one kind of a sulfur compound selected from the group consisting of a disulfide compound ), And controls crystal growth of the p-type semiconductor.;
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