METHODS AND TECHNIQUES TO USE WITH PHOTOSENSITIZED CHEMICALLY AMPLIFIED RESIST CHEMICALS AND PROCESSES

摘要

This disclosure describes a method for PS-CAR (Photosensitized Chemically Amplified Resist Chemicals) to pattern a photoresist on a semiconductor substrate. In one embodiment, the two-step exposure process can create a higher acid concentration region within the photoresist layer. PS-CAR chemicals may include photoacid generators (PAGs) and photosensitizer elements that enhance the degradation of PAGs into acids. The first exposure may be an initial amount of acid and a patterned EUV exposure that produces a photosensitizer. The second exposure may be a non-EUV front exposure that excites a photosensitizer that increases the acid production rate when the photosensitizer is located on the substrate. The distribution of energy during exposure can be optimized by using specific properties (e.g., thickness, refractive index, doping) of the photoresist layer, bottom layer, and / or top layer.