The present invention relates to a flash memory transistor using a semiconductor thin film, and a nonvolatile flash memory thin film transistor according to an embodiment of the present invention includes a source electrode and a drain electrode formed on a substrate and spaced apart from each other; A semiconductor channel layer formed on the substrate and covering a portion of the source electrode and the drain electrode; A dielectric layer formed on the substrate and covering the exposed portion of the source electrode and the drain electrode and the semiconductor channel layer; An additional semiconductor layer formed on the dielectric layer; And a gate electrode formed on the additional semiconductor layer.;The present invention as described above has an advantage that the efficiency of the erase operation can be improved by depositing an additional charge injection film in the memory element.;Flash memory, nonvolatile, thin film transistor
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