THIN-FILM TRANSISTOR, SEMICONDUCTOR MEMORY DEVICE HAVING THIN-FILM TRANSISTOR, AND ELECTRONIC APPARATUS HAVING THIN-FILM TRANSISTOR OR SEMICONDUCTOR MEMORY DEVICE

摘要

PROBLEM TO BE SOLVED: To stabilize a voltage-current characteristic by fixing the space between an offset and a contact within a specific range. ;SOLUTION: A TFT has an offset 54 between the gates 50 and the drain 52. And a space 58 of at least 0.3 m is secured between a contact region in the drain region and the offset 54. Namely, if the space 58 between the offset 54 and the contact 57 of the drain has a value of at least 0.3 m, it is possible for the TFT to have 0.2 m for p region of the drain 52 surely, even if there is an influence of mask dislocation, etc., of about 0.1 m. Accordingly, it becomes possible to secure each of the source (p-type), gate (n^- type), offset (n^- type), and drain (p-type) regions surely. By adopting a constitution like this, it becomes possible to stabilize the voltage-current characteristic of the TFT, and to improve the product characteristic of an electronic apparatus.;COPYRIGHT: (C)1998,JPO