- METHODS FOR FABRICATING MOS DEVICES HAVING EPITAXIALLY GROWN STRESS-INDUCING SOURCE AND DRAIN REGIONS

摘要

is provided by the method of manufacturing the semiconductor device 100 on the inside of the first region 180 and the semiconductor substrate 110 having the second region 200. According to an illustrative embodiment of the present invention, a method includes forming the second gate stack (128) overlying the first gate stack 124 and the second region (200) overlying said first region (180) and, in the step of etching the substrate 110, the second and first recess 142 second recess in 142, the first recess 142 is at least the first region (180) the aligned to the first gate stack 124, the second recess 142 is at least the first is arranged on the second gate stack 128 in the second region 200, the first and second re recess 142 in the first stress-inducing monocrystalline material comprising the steps of epitaxial growth of a (150), the first recesses 142, the first stress from - to eliminate the induction single crystal material (150) steps and, and the second stress in the first recesses (142) comprises an induction single crystal material (170) epitaxial growth of a step of the second stress-inducing monocrystalline material 170 is the first 1 stress-inducing monocrystalline material (150) and each have a different composition ;